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Germà Garcia Belmonte
Associate Professor in Applied Physics
                
Departament de Física
Universitat Jaume I
ES-12071 Castelló - Spain 

E-mail: garciag@fca.uji.es 
   

Germà Garcia-Belmonte (1964) received his Ph.D. degree at Universidad Nacional de Educación a Distancia, 1996. He worked from 1988 at CIEMAT, Madrid, on experimental as well as theoretical research in the area of digital processing of nuclear signal. He joined the Universitat Jaume I, Castelló, in 1992. Since 1993 he has been a full time teacher in various subjects of physics (electromagnetism, optics, thermodynamics, acoustics) and electronics (instrumentation, signal processing, sensors) in Engineering courses (Electrical, Electronics, Computer, Technical Design, Mechanical). He has also prepared laboratory courses and educational experiments. Some of these experiments were published in journals such as the American Journal of Physics and the IEEE Transactions in Education. He has written a book on laboratory techniques.
In the period between 1988 and 1995 professor Garcia-Belmonte worked in the field of nuclear signal processing using digital algorithms. He developed research on experimental and mathematics aspects of signal processing of g- and X-ray room-temperature solid-state detectors. From 1995 to 2003 research interests moved to the physical aspects of electrochemical systems and devices, particularly ionic transport and reaction in amorphous intercalation compounds, emphasizing experimental techniques.
Recently he follows researches in various topics within the field of Organic Electronics and photovoltaics as electronic mechanisms in organic light-emitting diodes, and plastic and thin-film solar cells. Device physics using  impedance  spectroscopy (including modeling and measuring) is his main subject.

Example of device modeling in photovoltaics

a) Main dynamic processes occurring in the solar cell absorber layer. Modulation of accumulated excess carriers gives rise to capacitances  Cn and Cp. SRH capture of conduction band electrons and valence band holes by the recombination center are modeled by resistive elements,  Rn and Rn, respectively.  Caccounts for concentration changes of occupied and empty surface recombination centers. b) Equivalent circuit used for fitting.

Recent papers on Organic Electronics and Photovoltaics

G. Garcia-Belmonte, E. M. Barea, Y. Ayyad-Limonge, J. M. Montero, H. J. Bolink, and J.Bisquert
Cathode effect on current-voltage characteristics of blue light-emitting diodes based on a polyspirofluorene
Proceedings SPIE 6999, 69992U (2008).

J. Bisquert, G. Garcia-Belmonte, A. Munar, M. Sessolo, A. Soriano, and H. J. Bolink
Band unpinning and photovoltaic model for P3HT-PCBM organic bulk heterojunctions under illumination
Chemical Physics Letters 465 (2008) 57-62

G. Garcia-Belmonte, A. Munar, E. M. Barea, J. Bisquert, I. Ugarte, and R. Pacios
Charge carrier mobility and lifetime of organic bulk heterojunction analyzed by impedance spectroscopy
Organic Electronics 9 (2008) 847-851

G. Garcia-Belmonte, J. M. Montero, Y. Ayyad-Limonge, E. M. Barea, J. Bisquert, H. J. Bolink
Perimeter leakage current in organic light-emitting diodes
Current Applied Physics (2008) in press

G. Garcia-Belmonte, J. Bisquert, P. R. Bueno, and C. F. O. Graeff
Impedance of carrier injection at the metal-organic interface mediated by surface states in electron-only tris(8-hydoxyquinoline) aluminium (Alq3) thin layers
Chemical Physics Letters 455 (2008) 242-248

I. Mora-Seró, Y. Luo, G. Garcia-Belmonte, J. Bisquert, D. Muñoz, C. Voz, J. Puigdollers and R. Alcubilla
Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination
Solar Energy Materials and Solar Cells 92 (2008) 505-509

Zvika Pomerantz; Arie Zaban; Subrata  Ghosh; Jean-Paul Lellouche; Germà Garcia-Belmonte; Juan Bisquert
Capacitance, spectroelectrochemistry and conductivity of polarons and bipolarons in a polydicarbazole based conducting polymer
J. Electroanal. Chem. 614 (2008) 49-60.

J. M. Montero, J. Bisquert, G. Garcia-Belmonte, H. J. Bolink, and E. M. Barea
Interpretation of capacitance spectra and transit times of single-carrier space-charge limited transport in oprganic layers with field-dependent mobility
physica status solidi (a) 204 (2007) 2402-2410.

G. Garcia-Belmonte, H. J. Bolink, and J. Bisquert
Capacitance-voltage characteristics of organic light-emitting diodes varying the cathode metal: Implications for interfacial states
Phys. Review B 75, 085316(1-8) (2007).


A. Pitarch, J. Bisquert, J. M. Montero, H. J. Bolink, E. M. Barea, and G. Garcia-Belmonte
Impedance of space-charge-limited currents in organic light-emitting diodes with double-injection and strong recombination
J. Appl. Phys. 100, 084502(1-5) (2006).

J. Bisquert, ,J. M. Montero, H. J. Bolink, E. M. Barea, and G. Garcia-Belmonte
Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility
physica status solidi (a) 203, 3762-3767 (2006).

J. García-Cañadas, F. Fabregat-Santiago, H. J. Bolink, E. Palomares, G. Garcia-Belmonte, and J. Bisquert
Determination of electron and hole energy levels in mesoporous nanocrystalline TiO2 solid-state dye solar cell
Synthetic Metals, 156, 944-948 (2006).

I. Mora-Seró, J. Bisquert, F. Fabregat-Santiago, G. Garcia-Belmonte, et al.
Implications of the negative capacitance observed at forward bias in nanocomposite and polycrystalline solar cells
Nano Letters, 6, 640-650 (2006)

J. Bisquert, G. Garcia-Belmonte, A. Pitarch and H. Bolink
Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes
Chem. Phys. Lett., 422, 184-191 (2006)

G. Garcia-Belmonte, J. García-Cañadas, I. Mora-Seró, J. Bisquert, C. Voz, J. Puigdollers and R. Alcubilla
Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy
Thin Solid Films, 514, 254-257 (2006)

J. L. Movilla, G. Garcia-Belmonte, J. Bisquert and J. Planelles.
Calculation of the electronic density of states induced by impurities in TiO2 quantum dots
Phys. Review B, 72, 1533131-4 (2005)

R. Hass, J. García-Cañadas, G. Garcia-Belmonte.
Electrochemical impedance analysis of redox switching hysteresis of poly(3,4-ethylenedioxythiophene) films
J. Electroanal. Chem., 577, 99-105 (2005)

F. Fabregat-Santiago, J. Bisquert, G. Garcia-Belmonte, G. Boschloo, A. Hagfeldt
Impedance spectroscopy study of the influence of electrolyte conditions in parameters of transport and recombination in dye-sensitized solar cells
Solar Energy Materials and Solar Cells, 87, 117-131 (2005)

F. Fabregat-Santiago, J. García-Cañadas, E. Palomares, J. N. Clifford, S. A. Haque, R. Durrant, G. Garcia-Belmonte, J. Bisquert
The origin of slow electron recombination processes in dye-sensitized solar cells with alumina barrier coatings
J. Appl. Phys.96, 6903-6907 (2004)

Pitarch, G. Garcia-Belmonte, I. Mora-Seró, J. Bisquert Electrochemical Impedance spectra for the complete equivalent circuit of diffusion and reaction under steady-state recombination current Phys. Chem. Chem. Phys. 6 2983-2988 (2004)

J. Bisquert, G. Garcia-Belmonte and J. García-Cañadas Effects of the Gaussian energy dispersion on the statistics of polarons and bipolarons in conducting polymers. J. Chem. Phys. 120 6726-6733 (2004)

G. Garcia-Belmonte, J. Bisquert and G. S. Popkirov Determination of the electronic conductivity of polybithiophene films at different doping levels using in situ electrochemical impedance measurements Appl. Phys. Lett. 83 2178-2180 (2003)

 

Research group: www.elp.uji.es